Materials & capabilities
A focused portfolio for semiconductor and advanced-materials laboratories, from a single research wafer to application-led processed sapphire substrates.
Single-crystal substrates for epitaxy, device fabrication, MEMS, optical coatings and process development.
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High-purity PVD materials in standard and custom geometries, with target bonding options.
Deposition materials selected for purity, form, source compatibility and the intended thin-film application.
Research-scale sapphire substrates processed through selected CVD and PVD routes, with emphasis on wide-bandgap oxide development.
Representative images are provided for application guidance. Final materials, dimensions and system configurations depend on project requirements.
Specification guidance
These fields are a practical starting point. Final specifications are confirmed against the application and the selected supply route.
| Parameter | Examples to provide | Why it matters |
|---|---|---|
| Material | Silicon, sapphire, SiC or another substrate | Defines the crystal and process family |
| Diameter and thickness | Nominal size, tolerance and quantity | Confirms tool and holder compatibility |
| Orientation | Crystal plane, off-cut and direction if applicable | Affects growth and device processing |
| Surface and grade | Single-side or double-side polish, prime, monitor or research grade | Sets surface quality and inspection level |
| Electrical properties | Dopant, conductivity type and resistivity range | Confirms electrical behaviour |
| Parameter | Examples to provide | Why it matters |
|---|---|---|
| Composition | Element, alloy, oxide, nitride or compound | Identifies the required material route |
| Purity | Required grade or minimum percentage | Controls impurities in the deposited film |
| Form and dimensions | Target diameter and thickness, pellets, granules, wire or pieces | Matches the deposition source |
| Backing and bonding | Backing plate material and preferred bonding method | Supports thermal and mechanical compatibility |
| Quantity | Number of targets or net material weight | Supports price and delivery planning |
| Parameter | Examples to provide | Why it matters |
|---|---|---|
| Film or material | Gallium oxide or another oxide composition | Defines the material and process route |
| Deposition route | LPCVD, mist CVD or a selected PVD method | Sets the process architecture and precursor needs |
| Sapphire format | 1 x 1 cm, 1 inch or 2 inch, with orientation if required | Confirms substrate and holder compatibility |
| Film target | Thickness, uniformity, coverage and surface requirements | Defines the acceptance criteria |
| Phase and dopant | Beta-phase gallium oxide or a doped composition such as Sn | Guides material and process development |
| Characterisation | Requested structural, optical, surface or electrical measurements | Confirms what evidence is required with the sample |
Indicative specifications for inquiry planning. Final configuration is confirmed against application requirements.
Custom specifications welcome