01
Muffle Furnaces
Enclosed chamber furnaces for laboratory heat treatment, calcination, sintering and materials preparation.
Up to 1200°C
Up to 1400°C
Up to 1700°C
Thermal & deposition equipment
Process systems configured for your laboratory.
Application-led selectionResearch system sourcing
Configuration, supply coordination and support through Epitaxia Systems
Epitaxia Systems supplies CVD, PECVD, RTP and laboratory furnace platforms for semiconductor and advanced-materials research. Systems can be configured around temperature, tube or chamber size, gas delivery, vacuum level, precursor method, controls and safety requirements.
Product classification
Furnace and deposition systems
Epitaxia Systems supports selection, configuration, delivery coordination and after-sales communication through suitable supply partners. The final configuration is based on the required process rather than a fixed catalogue model.
Reference images show typical laboratory configurations only. Final equipment design and specifications depend on the required process.
02
Tube Furnaces
Tube-based thermal platforms for controlled-atmosphere, inert-gas and vacuum-compatible research processes.
Up to 1200°C
Up to 1400°C
Up to 1700°C
03
Vacuum Furnaces
Reduced-pressure thermal systems for heat treatment and sintering where atmosphere control and contamination management are important.
Up to 1200°C
Up to 1400°C
Up to 1700°C
04
Atmosphere Furnaces
Chamber systems designed for heat treatment under inert, reducing or other controlled gas environments.
Inert atmosphere
Reducing atmosphere
Application-specific gas control
05
CVD & PECVD Systems
Integrated research platforms combining a process furnace with vacuum, gas-flow and precursor delivery for thin-film growth and surface processing.
Thermal CVD
Plasma-enhanced CVD
Custom gas and precursor delivery
06
RTP Tube Furnaces
Rapid thermal processing platforms for short-duration annealing and thermal cycles with controlled heating and cooling.
Rapid heating cycles
Controlled atmosphere
Recipe-based operation
Specification note
Temperature ranges and configurations are indicative categories for inquiry planning. Specifications, compliance, availability and support scope are confirmed in the final quotation.
Wafer preparation & device packaging
Dicing and wire bonding
Prepare research samples and form device interconnections with equipment selected for your substrate, metallization and packaging requirements.
07 / Wafer preparation
SYJ-400 CNC Wafer Dicer
A compact CNC platform for precision dicing and cutting of research wafers and compatible laboratory samples up to 4 inches in diameter. Programmable three-axis motion, adjustable feed rates, coolant-assisted cutting and vacuum-based sample holding support controlled sample preparation.
Applications
- Dicing research wafers up to 4 inches
- Preparing semiconductor and thin-film samples
- Straight or angle-adjusted cuts
- Compatible ceramic, glass and crystalline substrates
Configuration guidance
Blade type, flange, vacuum chuck, fixture, coolant method and cutting parameters are selected according to the substrate, thickness, cut geometry and required edge quality.
Enquire about SYJ-400Model specifications
Reference specifications for this model. Confirm the supplied configuration, accessories, utilities and acceptance criteria in your quotation.
| Parameter | Specification |
|---|---|
| Maximum wafer diameter | Up to 4 inches |
| Maximum workpiece | 8 × 4 × 1 inches |
| Effective axis travel | X: 8 in; Y: 4 in; Z: 1 in |
| Positioning accuracy | 0.01 mm |
| Motion resolution | 0.0025 mm |
| Feed rate | X/Y: 1–50 mm/min; Z: 1–20 mm/min |
| Stage adjustment | Two-angle adjustment, ±0.5° tolerance |
| Spindle drive | Brushless DC motor, variable to 3,000 rpm |
| Motor power | 180 W |
| Blade reference | 4-inch diamond blade, approximately 0.35 mm thick |
| Electrical supply | AC 110 V or 220 V, ±10% |
| Dimensions and weight | Approx. 580 × 560 × 660 mm; 33.5 kg |
08 / Device packaging
MDB-2575 Manual Wire Bonder
A manual ultrasonic wire-bonding platform for semiconductor-device research, microelectronic assembly and laboratory-scale packaging. Manual device positioning is combined with independently adjustable settings for the first and second bond points.
Applications
- Semiconductor-device research and prototyping
- Integrated-circuit and transistor packaging
- LED, display, sensor and thin-film device assembly
- Laboratory-scale microelectronic interconnection
Configuration guidance
Wire material and diameter, bonding tool, device fixture, pad metallization, imaging option and process parameters must be selected for the intended device and package.
Enquire about MDB-2575Model specifications
Reference specifications for this model. Confirm the supplied configuration, accessories, utilities and acceptance criteria in your quotation.
| Parameter | Specification |
|---|---|
| Equipment type | Manual ultrasonic wire bonder |
| Supported wire diameter | 25–75 µm |
| Ultrasonic frequency | 60 kHz |
| Ultrasonic power | Adjustable from 0–3 W |
| Bonding time | Adjustable from 5–200 ms |
| Bonding force | Adjustable from 10–60 g |
| Bond-point control | Independent first and second bond settings |
| Motorized bond span | 0–10 mm |
| Motorized loop height | 0–6 mm |
| Fixture working area | Approximately Ø16 mm |
| Imaging | Digital camera available as an option |
| Electrical supply | 220 VAC ±10%, 50 Hz, protective grounding |
| Dimensions and weight | Approx. 600 × 560 × 390 mm; 36 kg |
Brand-neutral sourcing
The right system starts with your process.
If a project needs a particular process architecture, compliance standard or instrument ecosystem, we can evaluate suitable systems from established manufacturers in India and international markets.
System selection guide
Compare the process families.
Use this table to identify the starting category. The quotation process confirms detailed performance, utilities, safety and documentation.
| System family | Typical configuration | Parameters to confirm | Common research use |
|---|---|---|---|
| Muffle furnace | Enclosed chamber, ambient or controlled option | Temperature, chamber size, ramp rate, controller | Calcination, annealing and sintering |
| Tube furnace | Single or multi-zone tube with gas or vacuum hardware | Tube material and size, zones, gases, pressure | Annealing, growth and atmosphere processing |
| Vacuum furnace | Sealed hot zone with pumping and pressure control | Base pressure, hot-zone size, temperature, loading | Low-contamination heat treatment |
| CVD or PECVD | Reactor, gas delivery, vacuum, precursor and controls | Film process, substrate, gases, plasma, exhaust and safety | Thin-film growth and surface processing |
| RTP | Rapid heating chamber or tube with recipe control | Sample size, peak temperature, ramp and cooling rate | Short-cycle annealing and thermal activation |
| Wafer dicer | SYJ-400 CNC cutting platform | Wafer material, thickness, blade, kerf, fixture and coolant | Research wafer and substrate preparation |
| Wire bonder | MDB-2575 manual ultrasonic platform | Wire, pad metallization, bonding tool, fixture and imaging | Device interconnection and prototype packaging |
Indicative specifications for inquiry planning. Final configuration is confirmed against application requirements.
To prepare a quotation
Send the process conditions, not just a model number.
- Process type and target material
- Maximum operating temperature
- Tube or chamber dimensions
- Required gases and flow ranges
- Base pressure or vacuum requirement
- Substrate or sample size
- Precursor and plasma requirements
- Facility power and utility constraints