Supplier-catalogue wafer range

Standard wafer materials and epi-ready substrates for advanced research and development applications.

Explore the available substrate, epitaxial and compound-semiconductor wafer formats. Every technical value shown below is drawn only from the supplied catalogue.

Illustrative group of silicon, silicon carbide, sapphire, compound-semiconductor and electro-optic wafers in clean carriers — Representative wafer materials; colours and appearance vary by material and specification.

Available categories

Choose a wafer family.

01Wafer family

Sapphire and Fused Quartz Wafers

Sapphire crystal and fused quartz wafer formats from 2 inches to 12 inches, with single-side or double-side polishing and customisation options.

Size-dependent specifications
Property	2 inch	3 inch	4 inch	6 inch	8 inch	12 inch
Diameter	50.8 ± 0.1 mm	76.2 ± 0.1 mm	100 ± 0.1 mm	150 ± 0.1 mm	200 ± 0.1 mm	300 ± 0.1 mm
Thickness	100 ± 15; 430 ± 15; 500 ± 15 µm	100 ± 15; 430 ± 15; 500 ± 15 µm	200 ± 15; 500 ± 15; 650 ± 15 µm	350 ± 15; 500 ± 15; 1000 ± 15 µm	700 ± 25; 1600 ± 25 µm; customised	725 ± 25; 1000 ± 25 µm; customised
Surface roughness	Ra ≤ 0.2 nm	Ra ≤ 0.2 nm	Ra ≤ 0.2 nm	Ra ≤ 0.2 nm	Ra ≤ 0.3 nm	Ra ≤ 0.5 nm
Warp	≤ 10 µm	≤ 10 µm	≤ 10 µm	≤ 15 µm	≤ 30 µm	≤ 60 µm
TTV	≤ 3 µm	≤ 10 µm	≤ 10 µm	≤ 10 µm	≤ 10 µm	≤ 10 µm
Scratch / dig	20/10	20/10	20/10	20/10	40/20	60/40
Shape	Round, 16 mm flat	22 mm OF length	30 / 32.5 mm OF length	47.5 mm OF length	Notch	Notch

Common catalogue details
Property	Catalogue specification
Material	Sapphire crystal or fused quartz crystal
Polish	Double-side polished or single-side polished (DSP / SSP)
Edge form	45° chamfer, C-shape
Customisation	Wafers can be customised

Request this wafer family

02Wafer family

Silicon Carbide Wafers

4H and 6H silicon carbide wafer options across conductive, semi-insulating and p-type catalogue categories.

Size-dependent specifications
Property	2 inch	3 inch	4 inch	6 inch	8 inch	12 inch
Diameter	50.8 ± 0.1 mm	76.2 ± 0.1 mm	100 ± 0.1 mm	150 ± 0.1 mm	200 ± 0.1 mm	300 ± 0.1 mm
Thickness	330 ± 25 µm	350 ± 25 µm	350 ± 15 µm	350 ± 15 µm	500 ± 25 µm; customised	600 ± 100 µm; customised
Type	4H-N / HPSI / 4H-SEMI; 6H-N / 6H-SEMI; 6H / 4H-P	4H-N / HPSI / 4H-SEMI; 6H / 4H-P	4H-N / HPSI / 4H-SEMI	4H-N / HPSI / 4H-SEMI; 6H-N / 6H-SEMI	4H-N / HPSI / 4H-SEMI	4H-N / HPSI / 4H-SEMI
Surface roughness	Polished Ra ≤ 1 nm; CMP Ra ≤ 0.5 nm	Polished Ra ≤ 1 nm; CMP Ra ≤ 0.5 nm	Polished Ra ≤ 1 nm; CMP Ra ≤ 0.2 nm	Polished Ra ≤ 1 nm; CMP Ra ≤ 0.2 nm	Polished Ra ≤ 1 nm; CMP Ra ≤ 0.2 nm	Ra ≤ 0.5 nm
Warp	≤ 25 µm	≤ 35 µm	≤ 30 µm	≤ 25 µm	± 35 µm	-
TTV	≤ 15 µm	≤ 15 µm	≤ 2.5 µm / ≤ 5 µm	≤ 2.5 µm / ≤ 6 µm	≤ 5 µm / ≤ 10 µm	-
4H-N resistivity	0.015 - 0.028 Ω·cm	0.015 - 0.028 Ω·cm	0.015 - 0.024 Ω·cm	0.015 - 0.024 Ω·cm	0.015 - 0.024 Ω·cm	-
6H-N resistivity	0.02 - 0.1 Ω·cm	-	-	≤ 0.2 Ω·cm	-	-
4H / 6H semi-insulating resistivity	> 1E5 Ω·cm	> 1E5 Ω·cm	-	-	-	-

Common catalogue details
Property	Catalogue specification
Polish	Double-side polished or single-side polished (DSP / SSP)
Wafer orientation	Off-axis 4.0° toward <11-20> ± 0.5°
Edge form	45° chamfer, C-shape
Customisation	SiC wafers can be customised

Request this wafer family

03Wafer family

Silicon Carbide Epitaxial Wafers

N-type SiC epitaxial structures on 4H-N SiC substrates, with size-linked layer thickness, voltage rating and doping concentration.

Epitaxial wafer specifications
Property	2 inch	4 inch	6 inch	8 inch	12 inch
Substrate diameter	50.8 mm	100 mm	150 mm	200 mm	300 mm
SiC substrate thickness	350 µm	350 µm	350 µm	500 µm	500 µm
Epitaxial layer thickness	5.5 µm	11 µm	15 µm	30 µm	30 µm
Voltage rating	650 V	1200 V	1700 V	3300 V	3300 V
Doping concentration	1.0E16 cm⁻³	8.0E15 cm⁻³	5.3E15 cm⁻³	3.0E15 cm⁻³	3.0E15 cm⁻³

Common catalogue details
Property	Catalogue specification
Substrate orientation	Off-axis 4° toward <11-20> ± 0.5°
Substrate resistivity	0.014 - 0.028 Ω·cm
Epitaxial conductivity	N-type
Dopant	N-doping
Thickness uniformity	± 6%
Doping uniformity	± 10%
Epitaxial surface	Ra < 1 nm
Structure	N-SiC / buffer / SiC substrate (4H-N)

Request this wafer family

04Wafer family

Silicon Wafers

Silicon wafers in p-type, n-type and intrinsic forms across dummy, test and prime grades.

Catalogue specifications
Property	Catalogue specification
Diameter	2 in / 50.8 mm; 3 in / 76.2 mm; 4 in / 100 mm; 5 in / 125 mm; 6 in / 150 mm; 8 in / 200 mm; 12 in / 300 mm
Type	P-type, N-type or intrinsic
Grade	Dummy, test or prime
Dopant	Boron for P-type; phosphorus for N-type; custom
Orientation	(100), (111), (110) or custom
Resistivity	0.001 - 30,000+ Ω·cm
Thickness	280 - 775+ µm; custom
Flat / notch	No flat, SEMI primary flat, JEIDA flat, two SEMI flats or notch
Finish	SSP, DSP, etched or lapped

Request this wafer family

05Wafer family

Silicon-on-Insulator Wafers

SOI structures with selectable device-layer and handle-layer type, orientation, resistivity and thickness, separated by a buried thermal oxide.

Overall wafer
Property	Catalogue specification
Wafer diameter	50 / 75 / 100 / 125 / 150 / 200 mm ± 25 µm
Bow / warp	< 10 µm
Particles	< 30 at 0.3 µm
Flat / notch	Flat or notch

Device layer and buried oxide
Property	Catalogue specification
Device-layer type / dopant	N-type or P-type; B, P, Sb or As
Device-layer orientation	<100>, <111> or <110>
Device-layer thickness	0.1 - 300 µm
Device-layer resistivity	0.001 - 100,000 Ω·cm
Device-layer particles	< 30 at 0.3 µm
Device-layer TTV	< 10 µm
Device-layer finish	Polished
Buried thermal oxide thickness	50 nm (500 Å) - 15 µm

Handle layer
Property	Catalogue specification
Handle-wafer type / dopant	N-type or P-type; B, P, Sb or As
Handle-wafer orientation	<100>, <111> or <110>
Handle-wafer resistivity	0.001 - 100,000 Ω·cm
Handle-wafer thickness	> 100 µm
Handle-wafer finish	Polished

Request this wafer family

06Wafer family

Lithium Niobate Wafers

White or black lithium niobate wafers with selectable crystal orientations and single-side or double-side surface configurations.

Size-dependent specifications
Property	2 inch	3 inch	4 inch	6 inch	8 inch
Diameter	50.8 mm	76.2 mm	100 mm	150 mm	200 mm
Thickness	250 µm	350 µm	500 µm	1000 µm	1000 µm

Common catalogue details
Property	Catalogue specification
Crystal orientation	Y-41°, Y-64°, Y-128°, X-cut or Z-cut
Colour	White or black
Front surface	Epi-polished, Ra < 0.5 nm
Back surface	SSP: fine-ground, Ra < 1.0 µm (GC#1000); DSP: epi-polished, Ra < 0.5 nm
Curie temperature	1142 °C ± 3 °C (DTA)
TTV	≤ 10 µm
Bow	≤ 25 µm
Edge exclusion	≤ 3 mm

Request this wafer family

07Wafer family

Lithium Tantalate Wafers

White or black lithium tantalate wafers with selectable Y-cut, X-cut and Z-cut orientations.

Size-dependent specifications
Property	2 inch	3 inch	4 inch	6 inch	8 inch
Diameter	50.8 mm	76.2 mm	100 mm	150 mm	200 mm
Thickness	250 µm	350 µm	500 µm	1000 µm	1000 µm

Common catalogue details
Property	Catalogue specification
Crystal orientation	Y-36°, Y-42°, Y-128°, X-cut or Z-cut
Colour	White or black
Front surface	Epi-polished, Ra < 0.5 nm
Back surface	SSP: fine-ground, Ra < 1.0 µm (GC#1000); DSP: epi-polished, Ra < 0.5 nm
Curie temperature	603 °C ± 2 °C (DTA)
TTV	≤ 10 µm
Bow	≤ 25 µm
Edge exclusion	≤ 3 mm

Request this wafer family

08Wafer family

LNOI Wafers

Bonded functional-layer wafers listed with lithium niobate or lithium tantalate top layers and multiple support-substrate options.

Catalogue specifications by diameter
Property	3 inch	4 inch	6 inch	8 inch
Top functional-layer material	Lithium niobate	Lithium niobate	Lithium tantalate	Lithium tantalate
Surface orientation	X-cut or per request	X-cut or per request	X-cut or per request	X-cut or per request
Primary flat orientation	-	Per request	-	-
Secondary flat orientation	-	Per request	-	-
Average film thickness	-	300 - 600 nm	-	-
Front surface	Optical polished	Optical polished	Optical polished	Optical polished
Average buried oxide thickness	4600 nm	4700 nm	4800 nm	-
Buried oxide thickness uniformity	-5%	0%	5%	-
Support material	Si / LN / sapphire / quartz / etc.	Same options	Same options	Same options
Support-substrate diameter	3 inch	4 inch	6 inch	8 inch
Support-layer total thickness	525 (unit unspecified)	525 (unit unspecified)	625 (unit unspecified)	725 (unit unspecified)
Device growth method	CZ	CZ	ZVD	Hydrothermal
Device orientation	{100}	-	0.5 deg	-
Device doping type	N	N	-	-
Device dopant	-	Phos	-	-
Surface finish	-	-	10 nm	-

Several LNOI entries are reproduced exactly as listed in the supplied catalogue, including the buried oxide uniformity values, support-layer thickness values without a stated unit, and the listed growth-method fields.

Request this wafer family

09Wafer family

Indium Phosphide Wafers

N-type or p-type indium phosphide wafers across a broad catalogue size and thickness range.

Catalogue specifications
Property	Catalogue specification
Material	InP
Size	2, 3, 4, 5, 6, 8 or 12 inches
Thickness	0.2 - 1.0 mm; can be customised
Doping concentration	1 × 10¹⁶ - 1 × 10¹⁸ cm⁻³
Etch pit density	5500 cm⁻²
Defect density	< 500 cm⁻²
Mobility	1200 - 2000 cm²/V·s
Storage conditions	20 - 25 °C; humidity < 60%
Conductivity type	N-type or P-type
Doping element	Antimony (Sb), indium (In), phosphorus (P), etc.

Request this wafer family

10Wafer family

Gallium Nitride Wafers

Free-standing GaN catalogue models covering undoped, n-type and Fe-doped semi-insulating configurations.

Shared dimensions and surfaces
Property	Catalogue specification
Dimensions	2, 3 or 4 inches
Thickness	350 + 25 µm
Usable surface area	> 90%
Orientation	C-plane (0001), off-angle toward M-axis 0.35° + 0.15°
Primary flat	(1-100) + 0.5°; 16.0 + 1.0 mm
Secondary flat	(11-20) + 3°; 8.0 + 1.0 mm
TTV	≤ 15 µm
Bow	≤ 20 µm
Dislocation density	A numeric range is printed in the catalogue, but its exponents are not legible in the supplied file; supplier confirmation is required
Front surface	Ra < 0.2 nm, polished; or < 0.3 nm, polished and surface-treated for epitaxy
Back surface	0.5 - 1.5 µm; optional 1 - 3 nm fine-ground or < 0.2 nm polished

Model-dependent electrical specifications
Model	Conductivity type	Resistivity at 300 K
GaN-FSC-U-C50	N-type	< 0.1 Ω·cm
GaN-FSC-N-C50	N-type	< 0.05 Ω·cm
GaN-FS-C-SI-C50	Semi-insulating, Fe-doped	> 10⁶ Ω·cm

Request this wafer family

11Wafer family

Gallium Arsenide Wafers

Semi-insulating, ZnN p-type and Si n-type VGF-grown GaAs wafer categories for microelectronics, LEDs and laser-diode applications.

Type-dependent specifications
Property	Semi-insulating	P-type / ZnN	N-type / Si	N-type / Si, laser diode
Application	Microelectronics	LED	-	Laser diode
Diameter	2 / 3 / 4 / 5 / 6 / 8 / 12 in	2 / 3 / 4 / 5 / 6 / 8 / 12 in	2 / 3 / 4 / 5 / 6 / 8 / 12 in	2 / 3 / 4 / 5 / 6 / 8 / 12 in
Growth method	VGF	VGF	VGF	VGF
Orientation	(100) + 0.5°	(100) + 0.5°	(100) + 0.5°	(100) + 0.5°
Thickness	350 - 625 µm + 25 µm	350 - 625 µm + 25 µm	350 - 625 µm + 25 µm	350 - 625 µm + 25 µm
OF / IF	US EJ or notch	US EJ or notch	US EJ or notch	US EJ or notch
Carrier concentration	-	(0.5 - 5) × 10¹⁹	(0.4 - 4) × 10¹⁸	(0.4 - 0.25) × 10¹⁸
Resistivity	> 10⁷ Ω·cm	(1.2 - 9.9) × 10⁻³ Ω·cm	(1.2 - 9.9) × 10⁻³ Ω·cm	(1.2 - 9.9) × 10⁻³ Ω·cm
Mobility	> 4000 cm²/V·s	50 - 120 cm²/V·s	> 1000 cm²/V·s	> 1500 cm²/V·s
Etch pit density	< 5000 cm⁻²	< 5000 cm⁻²	< 5000 cm⁻²	< 5000 cm⁻²
TTV [P/P]	< 5 µm	< 5 µm	< 5 µm	< 5 µm
TTV [P/E]	< 10 µm	< 10 µm	< 10 µm	< 10 µm
Warp	< 10 µm	< 10 µm	< 10 µm	< 10 µm
Surface finish	P/R; P/E; E/E	P/R; P/E; E/E	P/R; P/E; E/E	P/R; P/E; E/E

Request this wafer family

12Wafer family

Additional Wafer Materials

The supplier catalogue also lists additional wafer materials without numerical specifications.

Materials listed in the supplier catalogue
Material	Catalogue status
Indium arsenide (InAs)	-
Germanium (Ge)	-
Gallium antimonide (GaSb)	-
Gallium nitride (GaN)	Listed; detailed GaN table also provided
Indium antimonide (InSb)	-
Zinc oxide (ZnO)	-

Request this wafer family

Catalogue specifications are presented for enquiry planning. A quotation confirms the selected material, diameter, orientation, thickness, polish, electrical properties, packaging, quantity and supporting documentation.